Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells
Identifieur interne : 00E543 ( Main/Repository ); précédent : 00E542; suivant : 00E544Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells
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Abstract
We present the results of a comparative photoluminescence (PL) study of GaN and InGaN-based epilayers, and InGaN/GaN multiple quantum wells (MQWs). Room-temperature PL spectra were measured for a very broad range of optical excitation from 10 mW/cm2 up to 1 MW/cm2. In contrast to GaN epilayers, all In-containing samples exhibited an excitation-induced blueshift of the peak emission. In addition, the blueshift of the emission in the InGaN epilayers with the same composition as the quantum well was significantly smaller. The comparison of the blueshift in the bulk InGaN and in the MQWs allowed us to separate two different mechanisms responsible for this effect: (i) filling of the localized states in In-rich areas and (ii) screening of the polarization electric field in strained MQW structures. © 2002 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells</title><author><name sortKey="Kuokstis, E" uniqKey="Kuokstis E">E. Kuokstis</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Sensor Electronic Technology, Inc., 21 Cavalier Way, Latham, New York 12110</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Sensor Electronic Technology, Inc., 21 Cavalier Way, Latham</wicri:cityArea></affiliation></author><author><name sortKey="Yang, J W" uniqKey="Yang J">J. W. Yang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Simin, G" uniqKey="Simin G">G. Simin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Khan, M Asif" uniqKey="Khan M">M. Asif Khan</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Gaska, R" uniqKey="Gaska R">R. Gaska</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Shur, M S" uniqKey="Shur M">M. S. 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Room-temperature PL spectra were measured for a very broad range of optical excitation from 10 mW/cm2 up to 1 MW/cm2. In contrast to GaN epilayers, all In-containing samples exhibited an excitation-induced blueshift of the peak emission. In addition, the blueshift of the emission in the InGaN epilayers with the same composition as the quantum well was significantly smaller. The comparison of the blueshift in the bulk InGaN and in the MQWs allowed us to separate two different mechanisms responsible for this effect: (i) filling of the localized states in In-rich areas and (ii) screening of the polarization electric field in strained MQW structures. © 2002 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>80</s2></fA05><fA06><s2>6</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells</s1></fA08><fA11 i1="01" i2="1"><s1>KUOKSTIS (E.)</s1></fA11><fA11 i1="02" i2="1"><s1>YANG (J. W.)</s1></fA11><fA11 i1="03" i2="1"><s1>SIMIN (G.)</s1></fA11><fA11 i1="04" i2="1"><s1>KHAN (M. Asif)</s1></fA11><fA11 i1="05" i2="1"><s1>GASKA (R.)</s1></fA11><fA11 i1="06" i2="1"><s1>SHUR (M. S.)</s1></fA11><fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Sensor Electronic Technology, Inc., 21 Cavalier Way, Latham, New York 12110</s1></fA14><fA14 i1="03"><s1>ECSE, Rensselaer Polytechnic Institute, Troy, New York 12180</s1><sZ>6 aut.</sZ></fA14><fA14 i1="04"><s1>Sensor Electronic Technology, Inc., 21 Cavalier Way, Latham, New York 12110</s1><sZ>6 aut.</sZ></fA14><fA20><s1>977-979</s1></fA20><fA21><s1>2002-02-11</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. 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The comparison of the blueshift in the bulk InGaN and in the MQWs allowed us to separate two different mechanisms responsible for this effect: (i) filling of the localized states in In-rich areas and (ii) screening of the polarization electric field in strained MQW structures. © 2002 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H67D</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H66F</s0></fC02><fC02 i1="03" i2="3"><s0>001B70H55C</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7867D</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7866F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7855C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Puits quantique semiconducteur</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Semiconductor quantum wells</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Semiconducteur bande interdite large</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Wide band gap semiconductors</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Photoluminescence</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Photoluminescence</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Couche épitaxique semiconductrice</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Semiconductor epitaxial layers</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Déplacement raie</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Spectral line shift</s0></fC03><fN21><s1>042</s1></fN21><fN47 i1="01" i2="1"><s0>0206M000104</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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